Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

Sausan Al-Riyami; Shinya Ohmagari; Tsuyoshi Yoshitake

doi:10.1143/APEX.3.115102

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

Sausan Al-Riyami, Shinya Ohmagari, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18^-1.cm^-1 at 300 K. A heterojunction with p-type Si exhibited typical rectifying action. The UNCD grain size was estimated to be 2.5nm from X-ray diffraction measurement. Near-edge X-ray absorption fine-structure and Fourier transform infrared spectroscopies revealed the preferential formations of C=N and C-N bonds and an enhanced amount of sp² bonds in the films.

Original language	English
Article number	115102
Journal	Applied Physics Express
Volume	3
Issue number	11
DOIs	https://doi.org/10.1143/APEX.3.115102
Publication status	Published - Nov 2010

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/APEX.3.115102

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abstract = "Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18-1.cm-1 at 300 K. A heterojunction with p-type Si exhibited typical rectifying action. The UNCD grain size was estimated to be 2.5nm from X-ray diffraction measurement. Near-edge X-ray absorption fine-structure and Fourier transform infrared spectroscopies revealed the preferential formations of C=N and C-N bonds and an enhanced amount of sp2 bonds in the films.",

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AB - Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18-1.cm-1 at 300 K. A heterojunction with p-type Si exhibited typical rectifying action. The UNCD grain size was estimated to be 2.5nm from X-ray diffraction measurement. Near-edge X-ray absorption fine-structure and Fourier transform infrared spectroscopies revealed the preferential formations of C=N and C-N bonds and an enhanced amount of sp2 bonds in the films.

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Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

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