Abstract
Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18-1.cm-1 at 300 K. A heterojunction with p-type Si exhibited typical rectifying action. The UNCD grain size was estimated to be 2.5nm from X-ray diffraction measurement. Near-edge X-ray absorption fine-structure and Fourier transform infrared spectroscopies revealed the preferential formations of C=N and C-N bonds and an enhanced amount of sp2 bonds in the films.
Original language | English |
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Article number | 115102 |
Journal | Applied Physics Express |
Volume | 3 |
Issue number | 11 |
DOIs | |
Publication status | Published - Nov 2010 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)