Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen

Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano

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7 Citations (Scopus)

Abstract

We report nitrogen (N) doping of 4H-SiC by KrF excimer laser irradiation in liquid N2. In comparison to phosphorus (P) doping performed using phosphoric acid solution, the laser N doping can introduce N atoms deeper (∼1 μm depth) into the 4H-SiC, which results in reduction of doped layer resistance by approximately 3 orders of magnitude. Doping is shown to proceed by the thermal diffusion of species, while loss of the host material from the surface by ablation takes place at the same time. Chemical analysis shows that high density carbon (C) vacancies are generated in the N doped region, which suggests enhanced diffusion of N assisted by the presence of C vacancies. pn junction diodes are formed by using the N doping technique. Turn-on voltage is ∼-3 V, which is reasonable for a pn junction diode of 4H-SiC.

Original languageEnglish
Article number04DP02
JournalJapanese Journal of Applied Physics
Volume54
Issue number4
DOIs
Publication statusPublished - Apr 1 2015

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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