NO x gas sensing properties of tungsten oxide thin films synthesized by pulsed laser deposition method

Hiroharu Kawasaki, Jun Namba, Keitarou Iwatsuji, Yoshiaki Suda, Kenji Wada, Kenji Ebihara, Tamiko Ohshima

Research output: Contribution to journalConference articlepeer-review

50 Citations (Scopus)

Abstract

Tungsten oxide (WO 3 ) thin films have been deposited on silicon(1 0 0) and alumina substrates by using a pulsed excimer laser deposition method in oxygen gas. The crystalline structure and crystallographic orientation of the WO 3 films, measured by glancing-angle X-ray diffraction (GXRD) system, suggested that there were distinct peaks of crystalline WO 3 (0 0 1), (1 1 1), (2 0 1), (1 2 1), (0 0 2), (1 1 2), and (0 2 2) on the film prepared at P o2 = 10 Pa. The maximum sensitivity of WO 3 film, synthesized at P o2 = 10 Pa for 200 ppm NO x was increased with increasing substrate temperature. The maximum sensitivity for 200 ppm NO and 200 ppm NO 2 were approximately 65 and 170, respectively, at the operating temperature of 400 °C. The substrate temperature results in a notable change in NO x gas sensing properties of WO 3 thin films.

Original languageEnglish
Pages (from-to)547-551
Number of pages5
JournalApplied Surface Science
Volume197-198
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventCola 2001 - Tsukuba, Japan
Duration: Oct 1 2001Oct 1 2001

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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