Abstract
SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current-voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO 3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current-voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current-voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current-voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.
| Original language | English |
|---|---|
| Pages (from-to) | 605-611 |
| Number of pages | 7 |
| Journal | Science and Technology of Advanced Materials |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 1 2003 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
Non-linear current-voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals. / Sato, Yukio; Tanaka, Tomohito; Oba, Fumiyasu; Yamamoto, Takahisa; Ikuhara, Yuichi; Sakuma, Taketo.
In: Science and Technology of Advanced Materials, Vol. 4, No. 6, 01.11.2003, p. 605-611.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Non-linear current-voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals
AU - Sato, Yukio
AU - Tanaka, Tomohito
AU - Oba, Fumiyasu
AU - Yamamoto, Takahisa
AU - Ikuhara, Yuichi
AU - Sakuma, Taketo
PY - 2003/11/1
Y1 - 2003/11/1
N2 - SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current-voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO 3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current-voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current-voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current-voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.
AB - SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current-voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO 3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current-voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current-voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current-voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.
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U2 - 10.1016/j.stam.2003.10.031
DO - 10.1016/j.stam.2003.10.031
M3 - Article
VL - 4
SP - 605
EP - 611
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
SN - 1468-6996
IS - 6
ER -