Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

K. Moto, R. Matsumura, H. Chikita, T. Sadoh, H. Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To realize high-speed thin film transistors, we investigated formation of Ge1-xSnx (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm2 for Ge, ∼130 mJ/cm2 for GeSn. Moreover, Ge0.8Sn0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
EditorsS. Kar, K. Kita, D. Landheer, D. Misra
PublisherElectrochemical Society Inc.
Pages297-300
Number of pages4
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number5
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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