Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

K. Moto; R. Matsumura; H. Chikita; T. Sadoh; Hiroshi Ikenoue; M. Miyao

doi:10.1149/06905.0297ecst

Non-thermal equilibrium formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

K. Moto, R. Matsumura, H. Chikita, T. Sadoh, Hiroshi Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To realize high-speed thin film transistors, we investigated formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm² for Ge, ∼130 mJ/cm² for GeSn. Moreover, Ge_0.8Sn_0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.

Original language	English
Title of host publication	Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
Editors	S. Kar, K. Kita, D. Landheer, D. Misra
Publisher	Electrochemical Society Inc.
Pages	297-300
Number of pages	4
Edition	5
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06905.0297ecst
Publication status	Published - 2015
Event	Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	5
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/06905.0297ecst

Cite this

Moto, K., Matsumura, R., Chikita, H., Sadoh, T., Ikenoue, H., & Miyao, M. (2015). Non-thermal equilibrium formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing. In S. Kar, K. Kita, D. Landheer, & D. Misra (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 (5 ed., pp. 297-300). (ECS Transactions; Vol. 69, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/06905.0297ecst

Non-thermal equilibrium formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing. / Moto, K.; Matsumura, R.; Chikita, H. et al.
Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. ed. / S. Kar; K. Kita; D. Landheer; D. Misra. 5. ed. Electrochemical Society Inc., 2015. p. 297-300 (ECS Transactions; Vol. 69, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Moto, K, Matsumura, R, Chikita, H, Sadoh, T, Ikenoue, H & Miyao, M 2015, Non-thermal equilibrium formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing. in S Kar, K Kita, D Landheer & D Misra (eds), Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. 5 edn, ECS Transactions, no. 5, vol. 69, Electrochemical Society Inc., pp. 297-300, Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06905.0297ecst

Moto K, Matsumura R, Chikita H, Sadoh T, Ikenoue H, Miyao M. Non-thermal equilibrium formation of Ge_1-xSn_x (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing. In Kar S, Kita K, Landheer D, Misra D, editors, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. 5 ed. Electrochemical Society Inc. 2015. p. 297-300. (ECS Transactions; 5). doi: 10.1149/06905.0297ecst

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abstract = "To realize high-speed thin film transistors, we investigated formation of Ge1-xSnx (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm2 for Ge, ∼130 mJ/cm2 for GeSn. Moreover, Ge0.8Sn0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.",

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AB - To realize high-speed thin film transistors, we investigated formation of Ge1-xSnx (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm2 for Ge, ∼130 mJ/cm2 for GeSn. Moreover, Ge0.8Sn0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.

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