Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim, Hae Jin Kim, Insung Bae, Sun Kak Hwang, Dhinesh Babu Velusamy, Suk Man Cho, Kazuto Takaishi, Tsuyoshi Muto, Daisuke Hashizume, Masanobu Uchiyama, Pascal André, Fabrice Mathevet, Benoit Heinrich, Tetsuya Aoyama, Dae Eun Kim, Hyungsuk Lee, Jean Charles Ribierre, Cheolmin Park

Research output: Contribution to journalArticle

139 Citations (Scopus)

Abstract

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Original languageEnglish
Article number3583
JournalNature Communications
Volume5
DOIs
Publication statusPublished - Apr 8 2014

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Ferroelectric materials
Data storage equipment
Organic field effect transistors
Equipment and Supplies
Semiconducting organic compounds
radii
Nanoindentation
folding
flexibility
Durability
Electronic equipment
Derivatives
Mechanical properties
Semiconductors
cycles
endurance
organic semiconductors
vinylidene
nanoindentation
fluorides

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Kim, R. H., Kim, H. J., Bae, I., Hwang, S. K., Velusamy, D. B., Cho, S. M., ... Park, C. (2014). Non-volatile organic memory with sub-millimetre bending radius. Nature Communications, 5, [3583]. https://doi.org/10.1038/ncomms4583

Non-volatile organic memory with sub-millimetre bending radius. / Kim, Richard Hahnkee; Kim, Hae Jin; Bae, Insung; Hwang, Sun Kak; Velusamy, Dhinesh Babu; Cho, Suk Man; Takaishi, Kazuto; Muto, Tsuyoshi; Hashizume, Daisuke; Uchiyama, Masanobu; André, Pascal; Mathevet, Fabrice; Heinrich, Benoit; Aoyama, Tetsuya; Kim, Dae Eun; Lee, Hyungsuk; Ribierre, Jean Charles; Park, Cheolmin.

In: Nature Communications, Vol. 5, 3583, 08.04.2014.

Research output: Contribution to journalArticle

Kim, RH, Kim, HJ, Bae, I, Hwang, SK, Velusamy, DB, Cho, SM, Takaishi, K, Muto, T, Hashizume, D, Uchiyama, M, André, P, Mathevet, F, Heinrich, B, Aoyama, T, Kim, DE, Lee, H, Ribierre, JC & Park, C 2014, 'Non-volatile organic memory with sub-millimetre bending radius', Nature Communications, vol. 5, 3583. https://doi.org/10.1038/ncomms4583
Kim RH, Kim HJ, Bae I, Hwang SK, Velusamy DB, Cho SM et al. Non-volatile organic memory with sub-millimetre bending radius. Nature Communications. 2014 Apr 8;5. 3583. https://doi.org/10.1038/ncomms4583
Kim, Richard Hahnkee ; Kim, Hae Jin ; Bae, Insung ; Hwang, Sun Kak ; Velusamy, Dhinesh Babu ; Cho, Suk Man ; Takaishi, Kazuto ; Muto, Tsuyoshi ; Hashizume, Daisuke ; Uchiyama, Masanobu ; André, Pascal ; Mathevet, Fabrice ; Heinrich, Benoit ; Aoyama, Tetsuya ; Kim, Dae Eun ; Lee, Hyungsuk ; Ribierre, Jean Charles ; Park, Cheolmin. / Non-volatile organic memory with sub-millimetre bending radius. In: Nature Communications. 2014 ; Vol. 5.
@article{9f74ccf878e142a48b07813f30255d80,
title = "Non-volatile organic memory with sub-millimetre bending radius",
abstract = "High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.",
author = "Kim, {Richard Hahnkee} and Kim, {Hae Jin} and Insung Bae and Hwang, {Sun Kak} and Velusamy, {Dhinesh Babu} and Cho, {Suk Man} and Kazuto Takaishi and Tsuyoshi Muto and Daisuke Hashizume and Masanobu Uchiyama and Pascal Andr{\'e} and Fabrice Mathevet and Benoit Heinrich and Tetsuya Aoyama and Kim, {Dae Eun} and Hyungsuk Lee and Ribierre, {Jean Charles} and Cheolmin Park",
year = "2014",
month = "4",
day = "8",
doi = "10.1038/ncomms4583",
language = "English",
volume = "5",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Non-volatile organic memory with sub-millimetre bending radius

AU - Kim, Richard Hahnkee

AU - Kim, Hae Jin

AU - Bae, Insung

AU - Hwang, Sun Kak

AU - Velusamy, Dhinesh Babu

AU - Cho, Suk Man

AU - Takaishi, Kazuto

AU - Muto, Tsuyoshi

AU - Hashizume, Daisuke

AU - Uchiyama, Masanobu

AU - André, Pascal

AU - Mathevet, Fabrice

AU - Heinrich, Benoit

AU - Aoyama, Tetsuya

AU - Kim, Dae Eun

AU - Lee, Hyungsuk

AU - Ribierre, Jean Charles

AU - Park, Cheolmin

PY - 2014/4/8

Y1 - 2014/4/8

N2 - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

AB - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

UR - http://www.scopus.com/inward/record.url?scp=84906702995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906702995&partnerID=8YFLogxK

U2 - 10.1038/ncomms4583

DO - 10.1038/ncomms4583

M3 - Article

VL - 5

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 3583

ER -