TY - JOUR
T1 - Nondestructive characterization of oxide/germanium interface by direct-gap photoluminescence analysis
AU - Kabuyanagi, Shoichi
AU - Nishiumura, Tomonori
AU - Yajima, Takeaki
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/5/1
Y1 - 2015/5/1
N2 - We demonstrate that direct-gap photoluminescence (PL) analysis is useful for the nondestructive, fast, and in-line characterization of the oxide/ germanium (Ge) interface without making actual devices. The fact that Ge has a quasi-direct gap enables us to utilize direct-gap PL intensity as a good indicator for interface quality estimation. We experimentally confirm the validity of the present analysis, by comparing PL spectra with capacitance-voltage characteristics. The impact of the band bending at the interface on PL intensity is also discussed. Furthermore, the effect of forming gas annealing at oxide/Ge interfaces is discussed by taking advantage of the present method.
AB - We demonstrate that direct-gap photoluminescence (PL) analysis is useful for the nondestructive, fast, and in-line characterization of the oxide/ germanium (Ge) interface without making actual devices. The fact that Ge has a quasi-direct gap enables us to utilize direct-gap PL intensity as a good indicator for interface quality estimation. We experimentally confirm the validity of the present analysis, by comparing PL spectra with capacitance-voltage characteristics. The impact of the band bending at the interface on PL intensity is also discussed. Furthermore, the effect of forming gas annealing at oxide/Ge interfaces is discussed by taking advantage of the present method.
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U2 - 10.7567/APEX.8.051301
DO - 10.7567/APEX.8.051301
M3 - Article
AN - SCOPUS:84929493142
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
M1 - 051301
ER -