A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.
|Number of pages||3|
|Journal||Review of Scientific Instruments|
|Issue number||1 II|
|Publication status||Published - Jan 2003|
All Science Journal Classification (ASJC) codes