Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

Koichi Okamoto, Kenichi Inoue, Yoichi Kawakami, Shigeo Fujita, Masahide Terazima, Ayumu Tsujimura, Isao Kidoguchi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.

Original languageEnglish
Pages (from-to)575-577
Number of pages3
JournalReview of Scientific Instruments
Volume74
Issue number1 II
DOIs
Publication statusPublished - Jan 2003

All Science Journal Classification (ASJC) codes

  • Instrumentation

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