Nonvolatile bipolar resistive memory switching in single crystalline nio heterostructured nanowires

Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Hidekazu Tanaka, Tomoji Kawai

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.

Original languageEnglish
Pages (from-to)3434-3435
Number of pages2
JournalJournal of the American Chemical Society
Volume131
Issue number10
DOIs
Publication statusPublished - Mar 18 2009
Externally publishedYes

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Nanowires
Crystalline materials
Data storage equipment
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Nonvolatile bipolar resistive memory switching in single crystalline nio heterostructured nanowires. / Oka, Keisuke; Yanagida, Takeshi; Nagashima, Kazuki; Tanaka, Hidekazu; Kawai, Tomoji.

In: Journal of the American Chemical Society, Vol. 131, No. 10, 18.03.2009, p. 3434-3435.

Research output: Contribution to journalArticle

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