NO2 sensing properties of WO3 gate-fitted FET device

Seiji Nakata; Kengo Shimanoe; Norio Miura; Noboru Yamazoe

doi:10.5796/electrochemistry.71.503

NO₂ sensing properties of WO₃ gate-fitted FET device

Seiji Nakata, Kengo Shimanoe, Norio Miura, Noboru Yamazoe

Functional Materials Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A field effect transistor (FET) device fitted with a WO₃ layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO₂. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (V_GS) was found to increase linearly with an increase in the logarithm of NO₂ concentration over the range of several tens to 700 ppb NO₂, proving its potentiality to work as an environmental NO₂ sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO₂ were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO₂, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The V_GS response to NO₂ as well as its dependence on NO₂ concentration changed with a change in relative humidity.

Original language	English
Pages (from-to)	503-507
Number of pages	5
Journal	Electrochemistry
Volume	71
Issue number	6
DOIs	https://doi.org/10.5796/electrochemistry.71.503
Publication status	Published - Jun 2003

All Science Journal Classification (ASJC) codes

Electrochemistry

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10.5796/electrochemistry.71.503

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@article{a393a8e0b77f4092a7c62876dd96fba9,

title = "NO2 sensing properties of WO3 gate-fitted FET device",

abstract = "A field effect transistor (FET) device fitted with a WO3 layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO2. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (VGS) was found to increase linearly with an increase in the logarithm of NO2 concentration over the range of several tens to 700 ppb NO2, proving its potentiality to work as an environmental NO2 sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO2 were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO2, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The VGS response to NO2 as well as its dependence on NO2 concentration changed with a change in relative humidity.",

author = "Seiji Nakata and Kengo Shimanoe and Norio Miura and Noboru Yamazoe",

year = "2003",

month = jun,

doi = "10.5796/electrochemistry.71.503",

language = "English",

volume = "71",

pages = "503--507",

journal = "Electrochemistry",

issn = "1344-3542",

publisher = "The Electrochemical Society of Japan",

number = "6",

}

TY - JOUR

T1 - NO2 sensing properties of WO3 gate-fitted FET device

AU - Nakata, Seiji

AU - Shimanoe, Kengo

AU - Miura, Norio

AU - Yamazoe, Noboru

PY - 2003/6

Y1 - 2003/6

N2 - A field effect transistor (FET) device fitted with a WO3 layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO2. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (VGS) was found to increase linearly with an increase in the logarithm of NO2 concentration over the range of several tens to 700 ppb NO2, proving its potentiality to work as an environmental NO2 sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO2 were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO2, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The VGS response to NO2 as well as its dependence on NO2 concentration changed with a change in relative humidity.

AB - A field effect transistor (FET) device fitted with a WO3 layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO2. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (VGS) was found to increase linearly with an increase in the logarithm of NO2 concentration over the range of several tens to 700 ppb NO2, proving its potentiality to work as an environmental NO2 sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO2 were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO2, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The VGS response to NO2 as well as its dependence on NO2 concentration changed with a change in relative humidity.

UR - http://www.scopus.com/inward/record.url?scp=0042266748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042266748&partnerID=8YFLogxK

U2 - 10.5796/electrochemistry.71.503

DO - 10.5796/electrochemistry.71.503

M3 - Article

AN - SCOPUS:0042266748

SN - 1344-3542

VL - 71

SP - 503

EP - 507

JO - Electrochemistry

JF - Electrochemistry

IS - 6

ER -

NO₂ sensing properties of WO₃ gate-fitted FET device

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