Note on the analysis of DLTS and C2-DLTS

Hajime Tomokage, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The difference in the peak temperatures of DLTS and C2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C2-DLTS. These phenomena appear in DLTS and C2-DLTS measurements on Au-doped Si p+n diodes. It is necessary to use C2-DLTS together with DLTS in the study of deep impurities in semiconductors.

Original languageEnglish
Pages (from-to)67-70
Number of pages4
JournalJapanese Journal of Applied Physics
Volume21
Issue number1 R
DOIs
Publication statusPublished - Jan 1982

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Deep level transient spectroscopy
traps
temperature
diodes
impurities
Semiconductor materials
profiles
Temperature
Diodes
Impurities

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Note on the analysis of DLTS and C2-DLTS. / Tomokage, Hajime; Nakashima, Hiroshi; Hashimoto, Kimio.

In: Japanese Journal of Applied Physics, Vol. 21, No. 1 R, 01.1982, p. 67-70.

Research output: Contribution to journalArticle

Tomokage, Hajime ; Nakashima, Hiroshi ; Hashimoto, Kimio. / Note on the analysis of DLTS and C2-DLTS. In: Japanese Journal of Applied Physics. 1982 ; Vol. 21, No. 1 R. pp. 67-70.
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