Note on the analysis of DLTS and C²-DLTS

The difference in the peak temperatures of DLTS and C²-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C²-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great effect on the peak temperatures of DLTS and C²-DLTS. These phenomena appear in DLTS and C²-DLTS measurements on Au-doped Si p⁺n diodes. It is necessary to use C²-DLTS together with DLTS in the study of deep impurities in semiconductors.