Novel candidate of c-axis-oriented BLSF thin films for high-capacitance condenser

Takashi Kojima, Yukio Sakashita, Takayuki Watanabe, Kazumi Kato, Hiroshi Funakubo

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

c-axis-oriented SrBi2Ta2O9 thin films with various thickness ranging from 20-170 nm were epitaxially grown on (100)SrRuO3 (SrRuO3 is give for the pseudo-cubic unit cell)//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The relative dielectric constants of these films kept a constant value of about 55 with decreasing film thickness down to 20 nm. The capacitances of these films were almost independent of the applied electric field; change of capacitance for these films on applied electric field from 0 kV/cm to 100 kV/cm was within 0,017 % and tanδ value was within 1.3 %. The leakage current densities were constant against the film thickness on the order of 10-8 A/cm2 at 150 kV/cm. Surface flatness of these films were also almost the same irrespective of the film thickness. These characteristics are very attractive for high-capacitance condenser application. Therefore, c-axis-oriented BLSF thin films are novel candidates for high-capacitance condenser application having both bias-free and thickness independent characteristics together with the good surface smoothness.

Original languageEnglish
Pages (from-to)451-456
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume748
Publication statusPublished - Jul 28 2003
Externally publishedYes
EventFerroelectric Thin Films XI - Boston, MA, United States
Duration: Dec 2 2002Dec 5 2002

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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