Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication

Shunji Kimura, Yuhki Imai, Yutaka Miyamoto

Research output: Contribution to conferencePaper

11 Citations (Scopus)

Abstract

GaAs MESFET baseband amplifiers using novel distributed amplification schemes have been developed. The key feature of their design is a direct coupling architecture employing two new distributed DC transformers. One is a distributed level-shift circuit and the other is a distributed SCFL level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a DC-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier ICs. A distributed baseband amplifier IC with the distributed SCFL level transformer can be directly coupled with a GaAs SCFL circuit. This IC also has a DC-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics.

Original languageEnglish
Pages193-196
Number of pages4
Publication statusPublished - Dec 1 1995
Externally publishedYes
EventProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA
Duration: Oct 29 1995Nov 1 1995

Conference

ConferenceProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CitySan Diego, CA, USA
Period10/29/9511/1/95

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kimura, S., Imai, Y., & Miyamoto, Y. (1995). Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication. 193-196. Paper presented at Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, San Diego, CA, USA, .