Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report here a novel method of fabricating oxide semiconductors via a solid-phase crystallization from amorphous phase. By introducing a large amount of nitrogen atoms to the sputtering atmosphere, the amorphous phase is obtained, where the resultant films are amorphous oxynitride. Since the bonding energy is different between metal-oxygen and metal-nitrogen, solid-phase crystallization is achieved by annealing of amorphous oxynitride films in the oxidization atmosphere at adequate temperatures. The resultant oxide films are highly orientated even on quartz glass substrates and the crystallinity is higher than the films prepared by conventional sputtering deposition. The fabrication method proposed here is very promising for oxide films, especially for the oxide such as zinc oxide and indium (tin) oxide whose amorphous phase is difficult to be obtained.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages998-1001
Number of pages4
DOIs
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • Cite this

    Itagaki, N. (2010). Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 998-1001). [5686461] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686461