TY - GEN
T1 - Novel fabrication method for transparent conducting oxide films utilizing solid-phase crystallized seed layers
AU - Itagaki, Naho
AU - Kuwahara, Kazunari
AU - Nakahara, Kenta
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - High quality ZnO:Al (AZO) films have been obtained by our novel fabrication method utilizing solid-phase crystallized (SPC) seed layers. The crystal grain size of AZO films with seed layers is 5 times larger than that of conventional films, which is due to the low nuclei density of seed layers. As a result, the resistivity of AZO films of 18 nm in total film thickness is drastically reduced from 40×10-4Ωcm for the conventional films to 5×10-4Ωcm for our films. No differences in transparency hve been observed between AZO films with and without seed layers and their optical transmittance is higher than 80% in a wide wavelength range of 400-2500 nm. These results reveal that our method is very promising for fabrication of transparent conducting oxide films. Our method opens up a new avenue for oxide fabrications of nm thick films with excellent crystallinity, because it can be easily extended to other oxides whose amorphous phase is difficult to obtain.
AB - High quality ZnO:Al (AZO) films have been obtained by our novel fabrication method utilizing solid-phase crystallized (SPC) seed layers. The crystal grain size of AZO films with seed layers is 5 times larger than that of conventional films, which is due to the low nuclei density of seed layers. As a result, the resistivity of AZO films of 18 nm in total film thickness is drastically reduced from 40×10-4Ωcm for the conventional films to 5×10-4Ωcm for our films. No differences in transparency hve been observed between AZO films with and without seed layers and their optical transmittance is higher than 80% in a wide wavelength range of 400-2500 nm. These results reveal that our method is very promising for fabrication of transparent conducting oxide films. Our method opens up a new avenue for oxide fabrications of nm thick films with excellent crystallinity, because it can be easily extended to other oxides whose amorphous phase is difficult to obtain.
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U2 - 10.1063/1.3653599
DO - 10.1063/1.3653599
M3 - Conference contribution
AN - SCOPUS:84455181349
SN - 9780735409637
T3 - AIP Conference Proceedings
SP - 23
EP - 26
BT - International Conference on Advances in Condensed and Nano Materials, ICACNM-2011
T2 - International Conference on Advances in Condensed and Nano Materials, ICACNM-2011
Y2 - 23 February 2011 through 26 February 2011
ER -