Novel fabrication method for ZnO films via nitrogen-mediated crystallization

N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

High quality ZnO films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and ZnO films. The crystal grain size of ZnO:Al (AZO) films with NMC-buffer layers is about 3 times larger than that of conventional films, which is considered to be due to the low nuclei density of NMC-buffer layers. As a result, the resistivity of AZO films drastically reduces from 4.76 mΩ·cm for the conventional films to 0.48 mΩ·cm for our films when the total film thickness is 20 nm. The NMC buffer layers also improve the spatial distribution of the resistivity, which indicates that the crystallinity at the initial stage of deposition govern the properties of AZO films. Furthermore, we have succeeded in epitaxial growth of ZnO films, whose FWHM of the rocking curve of (002) peak is as narrow as 0.061°, on c-plane sapphire substrates by using the NMC method. From these results, we conclude that our method described here is full of promise for fabrication of ZnO-based materials.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices III
DOIs
Publication statusPublished - Mar 23 2012
EventOxide-Based Materials and Devices III - San Francisco, CA, United States
Duration: Jan 22 2012Jan 25 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8263
ISSN (Print)0277-786X

Other

OtherOxide-Based Materials and Devices III
CountryUnited States
CitySan Francisco, CA
Period1/22/121/25/12

Fingerprint

Crystallization
Nitrogen
Fabrication
crystallization
nitrogen
fabrication
Buffer layers
Buffer
buffers
Resistivity
Zinc Oxide
electrical resistivity
Epitaxial Growth
Aluminum Oxide
Sputtering
Sapphire
Full width at half maximum
Epitaxial growth
Grain Size
Spatial distribution

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Itagaki, N., Kuwahara, K., Matsushima, K., & Oshikawa, K. (2012). Novel fabrication method for ZnO films via nitrogen-mediated crystallization. In Oxide-Based Materials and Devices III [826306] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8263). https://doi.org/10.1117/12.911971

Novel fabrication method for ZnO films via nitrogen-mediated crystallization. / Itagaki, N.; Kuwahara, K.; Matsushima, K.; Oshikawa, K.

Oxide-Based Materials and Devices III. 2012. 826306 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8263).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Itagaki, N, Kuwahara, K, Matsushima, K & Oshikawa, K 2012, Novel fabrication method for ZnO films via nitrogen-mediated crystallization. in Oxide-Based Materials and Devices III., 826306, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8263, Oxide-Based Materials and Devices III, San Francisco, CA, United States, 1/22/12. https://doi.org/10.1117/12.911971
Itagaki N, Kuwahara K, Matsushima K, Oshikawa K. Novel fabrication method for ZnO films via nitrogen-mediated crystallization. In Oxide-Based Materials and Devices III. 2012. 826306. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.911971
Itagaki, N. ; Kuwahara, K. ; Matsushima, K. ; Oshikawa, K. / Novel fabrication method for ZnO films via nitrogen-mediated crystallization. Oxide-Based Materials and Devices III. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{2e98619ff70b471e8187e00000e74651,
title = "Novel fabrication method for ZnO films via nitrogen-mediated crystallization",
abstract = "High quality ZnO films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and ZnO films. The crystal grain size of ZnO:Al (AZO) films with NMC-buffer layers is about 3 times larger than that of conventional films, which is considered to be due to the low nuclei density of NMC-buffer layers. As a result, the resistivity of AZO films drastically reduces from 4.76 mΩ·cm for the conventional films to 0.48 mΩ·cm for our films when the total film thickness is 20 nm. The NMC buffer layers also improve the spatial distribution of the resistivity, which indicates that the crystallinity at the initial stage of deposition govern the properties of AZO films. Furthermore, we have succeeded in epitaxial growth of ZnO films, whose FWHM of the rocking curve of (002) peak is as narrow as 0.061°, on c-plane sapphire substrates by using the NMC method. From these results, we conclude that our method described here is full of promise for fabrication of ZnO-based materials.",
author = "N. Itagaki and K. Kuwahara and K. Matsushima and K. Oshikawa",
year = "2012",
month = "3",
day = "23",
doi = "10.1117/12.911971",
language = "English",
isbn = "9780819489067",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Oxide-Based Materials and Devices III",

}

TY - GEN

T1 - Novel fabrication method for ZnO films via nitrogen-mediated crystallization

AU - Itagaki, N.

AU - Kuwahara, K.

AU - Matsushima, K.

AU - Oshikawa, K.

PY - 2012/3/23

Y1 - 2012/3/23

N2 - High quality ZnO films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and ZnO films. The crystal grain size of ZnO:Al (AZO) films with NMC-buffer layers is about 3 times larger than that of conventional films, which is considered to be due to the low nuclei density of NMC-buffer layers. As a result, the resistivity of AZO films drastically reduces from 4.76 mΩ·cm for the conventional films to 0.48 mΩ·cm for our films when the total film thickness is 20 nm. The NMC buffer layers also improve the spatial distribution of the resistivity, which indicates that the crystallinity at the initial stage of deposition govern the properties of AZO films. Furthermore, we have succeeded in epitaxial growth of ZnO films, whose FWHM of the rocking curve of (002) peak is as narrow as 0.061°, on c-plane sapphire substrates by using the NMC method. From these results, we conclude that our method described here is full of promise for fabrication of ZnO-based materials.

AB - High quality ZnO films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and ZnO films. The crystal grain size of ZnO:Al (AZO) films with NMC-buffer layers is about 3 times larger than that of conventional films, which is considered to be due to the low nuclei density of NMC-buffer layers. As a result, the resistivity of AZO films drastically reduces from 4.76 mΩ·cm for the conventional films to 0.48 mΩ·cm for our films when the total film thickness is 20 nm. The NMC buffer layers also improve the spatial distribution of the resistivity, which indicates that the crystallinity at the initial stage of deposition govern the properties of AZO films. Furthermore, we have succeeded in epitaxial growth of ZnO films, whose FWHM of the rocking curve of (002) peak is as narrow as 0.061°, on c-plane sapphire substrates by using the NMC method. From these results, we conclude that our method described here is full of promise for fabrication of ZnO-based materials.

UR - http://www.scopus.com/inward/record.url?scp=84858593275&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858593275&partnerID=8YFLogxK

U2 - 10.1117/12.911971

DO - 10.1117/12.911971

M3 - Conference contribution

AN - SCOPUS:84858593275

SN - 9780819489067

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices III

ER -