Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers

Naho Itagaki; Kazunari Kuwahara

doi:10.1557/opl.2011.709

Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers

Naho Itagaki, Kazunari Kuwahara

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers has been developed. In this method, solid phase crystallization (SPC) is performed by annealing amorphous ZnON films, which are prepared by sputtering of ZnO targets in Ar/N ₂ mixed gases, in an oxidization atmosphere. The grain size of ZnO films deposited on the seed layers is significant larger than that of ZnO films directly deposited on glass substrates, which is considered to be due to the low grain density of seed layers. By utilizing this technique, the resistivity of ZnO:Al (AZO) films is decreased from 20× 10 ^-4 Ω cm to 5 × 10 ^-4 Ω cm at the film thickness of 30nm. Furthermore, we observed that SPC seed layers are in-plane aligned when Al ₂O ₃ substrates are used, which suggests that the fabrication method proposed here is also promising for synthesizing epitaxial ZnO films.

Original language	English
Title of host publication	Transparent Conducting Oxides and Applications
Pages	15-20
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.709
Publication status	Published - Jan 1 2012
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2010 → Dec 3 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1315
ISSN (Print)	0272-9172

Other

Other	2010 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	11/29/10 → 12/3/10

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Itagaki, N., & Kuwahara, K. (2012). Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers. In Transparent Conducting Oxides and Applications (pp. 15-20). (Materials Research Society Symposium Proceedings; Vol. 1315). https://doi.org/10.1557/opl.2011.709

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abstract = "A novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers has been developed. In this method, solid phase crystallization (SPC) is performed by annealing amorphous ZnON films, which are prepared by sputtering of ZnO targets in Ar/N 2 mixed gases, in an oxidization atmosphere. The grain size of ZnO films deposited on the seed layers is significant larger than that of ZnO films directly deposited on glass substrates, which is considered to be due to the low grain density of seed layers. By utilizing this technique, the resistivity of ZnO:Al (AZO) films is decreased from 20× 10 -4 Ω cm to 5 × 10 -4 Ω cm at the film thickness of 30nm. Furthermore, we observed that SPC seed layers are in-plane aligned when Al 2O 3 substrates are used, which suggests that the fabrication method proposed here is also promising for synthesizing epitaxial ZnO films.",

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AB - A novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers has been developed. In this method, solid phase crystallization (SPC) is performed by annealing amorphous ZnON films, which are prepared by sputtering of ZnO targets in Ar/N 2 mixed gases, in an oxidization atmosphere. The grain size of ZnO films deposited on the seed layers is significant larger than that of ZnO films directly deposited on glass substrates, which is considered to be due to the low grain density of seed layers. By utilizing this technique, the resistivity of ZnO:Al (AZO) films is decreased from 20× 10 -4 Ω cm to 5 × 10 -4 Ω cm at the film thickness of 30nm. Furthermore, we observed that SPC seed layers are in-plane aligned when Al 2O 3 substrates are used, which suggests that the fabrication method proposed here is also promising for synthesizing epitaxial ZnO films.

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