TY - JOUR
T1 - Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics
AU - Miyao, Masanobu
AU - Sadoh, Taizoh
N1 - Funding Information:
The authors would like to thank Professor I. Tsunoda of National Institute of Technology, Kumamoto College, Dr. H. Kanno and Dr. M. Tanaka of Toshiba Corporation, Professor K. Toko of the University of Tsukuba, Professor M. Kurosawa of Nagoya University, Dr. J.-H. Park of Park Systems, and Dr. R. Matumura of the University of Tokyo. Without their experimental contributions and stimulating discussions during their doctoral studies at Kyushu University, this research would not have been accomplished. This is gratefully acknowledged. Part of this work was supported by Grants-in-Aid (18063018, 25289089, 15H03976) for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/5
Y1 - 2017/5
N2 - Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (∼1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400°C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (>300°C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.
AB - Recent progress in the crystal growth of group-IV-based semiconductor-on-insulators is reviewed from physical and technological viewpoints. Liquid-phase growth based on SiGe-mixing-triggered rapid-melting growth enables formation of hybrid (100) (110) (111)-orientation Ge-on-insulator (GOI) structures, which show defect-free GOI with very high carrier mobility (∼1040 cm2 V-1 s-1). Additionally, SiGe mixed-crystals with laterally uniform composition were obtained by eliminating segregation phenomena during the melt-back process. Low-temperature solid-phase growth has been explored by combining this process with ion-beam irradiation, additional doping of group-IV elements, metal induced lateral crystallization with/without electric field, and metal-induced layer exchange crystallization. These efforts have enabled crystal growth on insulators below 400°C, achieving high carrier mobility (160-320 cm2 V-1 s-1). Moreover, orientation-controlled SiGe and Ge films on insulators have been obtained below the softening temperatures of conventional plastic films (>300°C). Detailed characterization provides an understanding of physical phenomena behind these crystal growth techniques. Applying these methods when fabricating next-generation electronics is also discussed.
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U2 - 10.7567/JJAP.56.05DA06
DO - 10.7567/JJAP.56.05DA06
M3 - Review article
AN - SCOPUS:85019014711
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
M1 - 05DA06
ER -