Novel semiconducting quinone for air-stable n-type organic field-effect transistors

Masashi Mamada, Daisuke Kumaki, Jun Ichi Nishida, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b′]dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular π-π and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm2 V -1 s-1 under vacuum conditions and above 0.1 cm 2 V-1 s-1 in air.

Original languageEnglish
Pages (from-to)1303-1307
Number of pages5
JournalACS Applied Materials and Interfaces
Volume2
Issue number5
DOIs
Publication statusPublished - May 26 2010
Externally publishedYes

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Organic field effect transistors
Electron mobility
Derivatives
Quinones
Electron affinity
Semiconducting organic compounds
Air
Charge carriers
Vacuum
benzoquinone
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Novel semiconducting quinone for air-stable n-type organic field-effect transistors. / Mamada, Masashi; Kumaki, Daisuke; Nishida, Jun Ichi; Tokito, Shizuo; Yamashita, Yoshiro.

In: ACS Applied Materials and Interfaces, Vol. 2, No. 5, 26.05.2010, p. 1303-1307.

Research output: Contribution to journalArticle

Mamada, Masashi ; Kumaki, Daisuke ; Nishida, Jun Ichi ; Tokito, Shizuo ; Yamashita, Yoshiro. / Novel semiconducting quinone for air-stable n-type organic field-effect transistors. In: ACS Applied Materials and Interfaces. 2010 ; Vol. 2, No. 5. pp. 1303-1307.
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