Novel solution growth method of bulk AlN using Al and Li3N solid sources

Yoshihiro Kangawa, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

In this work, we developed a solution growth method that uses Li-Al-N solution to epitaxially grow AlN on a self-nucleated, columnar AlN seed crystal. The seed crystal was grown by physical vapor transport, and the solution was obtained by annealing a Li3N-Al mixture. The epitaxial AlN grew ∼5 μm in 10 h. Scanning electron microscopy analyses showed that the grown layer had many voids near the epilayer/seed interface, but no evidence of cracks. Using transmission electron microscopy analyses, we found that the growth direction of the AlN was [1100] and the layer had threading dislocation propagating along [1100] with a density of ∼4 × 108 cm -2.

Original languageEnglish
Article number095501
JournalApplied Physics Express
Volume4
Issue number9
DOIs
Publication statusPublished - Sep 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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