Abstract
A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n+Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150 °C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.
Original language | English |
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Article number | 7914753 |
Pages (from-to) | 716-719 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 2017 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering