N+Si/pGe heterojunctions fabricated by low temperature ribbon bonding with passivating interlayer

Tony Chi Liu, Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A bonding technique via passivating interlayer formation is proposed for bulkmaterial heterojunction fabrication. n+Si/pGe heterojunctions were fabricated by a ribbon bonding with interfaces passivated by an amorphous interlayer. With a highest process temperature as low as 150 °C, the bonded junctions exhibited rectifying characteristics with a turn-on voltage of 0.3 V as an ideal Si/Ge heterojunction and an ideality factor of 2.15. This technique shows a great potential for bulk material heterojunction formation, especially when ultimately abrupt junctions and low temperature processes are needed.

Original languageEnglish
Article number7914753
Pages (from-to)716-719
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number6
DOIs
Publication statusPublished - Jun 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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