Nuclear reaction models responsible for simulation of neutron-induced soft errors in microelectronics

Research output: Contribution to journalArticle

Abstract

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.

Original languageEnglish
Pages (from-to)254-257
Number of pages4
JournalNuclear Data Sheets
Volume120
DOIs
Publication statusPublished - Jan 1 2014

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microelectronics
nuclear reactions
neutrons
simulation
secondary cosmic rays
field effect transistors
ions
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics

Cite this

Nuclear reaction models responsible for simulation of neutron-induced soft errors in microelectronics. / Watanabe, Yukinobu; Abe, S.

In: Nuclear Data Sheets, Vol. 120, 01.01.2014, p. 254-257.

Research output: Contribution to journalArticle

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