Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes: A molecular-dynamics study

Yanping Xiao, Jun Taguchi, Teruaki Motooka, Shinji Munetoh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si 1-xGe x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si 1-xGe x melts using a crystalline Si 1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T m (T m: melting temperature for Si 1-xGe x ). No nucleation was found when the temperature was higher than 0.75 T m. The crystal growth rates of Si 1-xGe x peaked between 0.90 T m and 0.94 T m for both the [100] and [111] orientations. These results suggest that 0.90 T m to 0.94 T m of Si 1-xGe x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.

Original languageEnglish
Article number035601
JournalJapanese Journal of Applied Physics
Volume51
Issue number3 PART 1
DOIs
Publication statusPublished - Mar 2012

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Crystal growth
Molecular dynamics
crystal growth
Nucleation
nucleation
molecular dynamics
Cooling
cooling
melting
Melting
Crystalline materials
Melting point
Seed
seeds
Temperature
Computer simulation
temperature
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes : A molecular-dynamics study. / Xiao, Yanping; Taguchi, Jun; Motooka, Teruaki; Munetoh, Shinji.

In: Japanese Journal of Applied Physics, Vol. 51, No. 3 PART 1, 035601, 03.2012.

Research output: Contribution to journalArticle

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