To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si 1-xGe x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si 1-xGe x melts using a crystalline Si 1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T m (T m: melting temperature for Si 1-xGe x ). No nucleation was found when the temperature was higher than 0.75 T m. The crystal growth rates of Si 1-xGe x peaked between 0.90 T m and 0.94 T m for both the  and  orientations. These results suggest that 0.90 T m to 0.94 T m of Si 1-xGe x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)