Nucleation and crystal growth of Si 1-xGe x melts during rapid cooling processes: A molecular-dynamics study

Yanping Xiao, Jun Taguchi, Teruaki Motooka, Shinji Munetoh

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3 Citations (Scopus)


To clarify the growth mechanism of the lateral growth of Ge in the rapid-melting-growth process, two types of molecular-dynamics simulation were investigated in this study. One was the nucleation of Si 1-xGe x (0 ≤ × ≤ 1) from supercooled melts, and the other is the growth rate of supercooled Si 1-xGe x melts using a crystalline Si 1-xGex seed. The incubation time is found to be minimum at approximately 0.70 T m (T m: melting temperature for Si 1-xGe x ). No nucleation was found when the temperature was higher than 0.75 T m. The crystal growth rates of Si 1-xGe x peaked between 0.90 T m and 0.94 T m for both the [100] and [111] orientations. These results suggest that 0.90 T m to 0.94 T m of Si 1-xGe x (x = 1) is an optimum temperature range to grow crystalline Ge in the rapid-melting-growth process.

Original languageEnglish
Article number035601
JournalJapanese journal of applied physics
Issue number3 PART 1
Publication statusPublished - Mar 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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