Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Satoshi Yamada, Jun Ichi Kato, Satoru Tanaka, Ikuo Suemune, Adrian Avramescu, Yoshinobu Aoyagi, Nobuaki Teraguchi, Akira Suzuki

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51 Citations (Scopus)

Abstract

Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, which were obtained by HCl etching at elevated temperatures prior to growth, were investigated. The surface morphology and the defect density of AlN films on such surfaces were significantly improved compared to those on as-received SiC surfaces. This is due to enhanced diffusion length and reduced incoherent boundaries at the coalescence regions of the AlN islands. AlN nuclei on the as-received SiC surface were crystallographically misaligned and thus induced incoherent boundaries at the coalescence stage, resulting in the delay of the two-dimensional growth mode transition and defect formation in AlN films.

Original languageEnglish
Pages (from-to)3612-3614
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number23
DOIs
Publication statusPublished - Jun 4 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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