Nucleation and growth of defect clusters in CeO2 irradiated with electrons

K. Yasunaga, K. Yasuda, S. Matsumura, T. Sonoda

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Nucleation and growth process of defect clusters in cerium dioxide (CeO2) with fluorite-type crystal structure has been investigated in situ under electron irradiation by using high voltage transmission electron microscopy. Planar defect clusters were formed with electron irradiation ranging from 200 to 1000 keV at temperatures below 450 K. The defect clusters were determined to be faulted-interstitial type dislocation loops lying on {1 1 1} planes. The growth rate of dislocation loops was found to increase with decreasing electron energy. An analysis of the fluence dependence of the growth process of dislocation loops suggests an increase in the vacancy mobility with decreasing electron energy. The rate of the electronic excitation is discussed in terms of the radiation-induced diffusion of oxygen-ion vacancies.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume250
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Sep 1 2006

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Nucleation
Electron irradiation
nucleation
electron irradiation
Defects
Vacancies
Electrons
defects
electron energy
electrons
Fluorspar
fluorite
Cerium
oxygen ions
cerium
dioxides
Dislocations (crystals)
high voltages
fluence
interstitials

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Nucleation and growth of defect clusters in CeO2 irradiated with electrons. / Yasunaga, K.; Yasuda, K.; Matsumura, S.; Sonoda, T.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 250, No. 1-2 SPEC. ISS., 01.09.2006, p. 114-118.

Research output: Contribution to journalArticle

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