Nucleation and growth process of defect clusters in copper during helium ion irradiation

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The formation process of interstitial dislocation loops in copper under He 1 ion irradiation has been studied by using transmission electron microscopy. Wedge shaped specimens of pure copper are subjected to irradiation with 5 to 100 keV He+ ions at irradiation temperatures between 300 to 570 K. The minimum thickness where interstitial loops are formed increases with increasing He+ ion energy and irradiation temperature, although this thickness scarcely depends on He+ ion dose rate. The density of loops shows a linear increase against dose for irradiation with 20 and 30 keV He+ ions but has a higher order dependence with respect to doses greater than 2 under irradiation with 5 and 10 keV He+ ions. On the basis of the results induced by He+ ion irradiation, we have concluded that a low fraction of high energy PKAs play an important role for the nucleation of interstitial loops for energies higher than about 20 keV.

Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalJournal of Nuclear Materials
Issue numberPART II
Publication statusPublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering


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