Nucleation and growth process of defect clusters in copper during helium ion irradiation

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The formation process of interstitial dislocation loops in copper under He 1 ion irradiation has been studied by using transmission electron microscopy. Wedge shaped specimens of pure copper are subjected to irradiation with 5 to 100 keV He+ ions at irradiation temperatures between 300 to 570 K. The minimum thickness where interstitial loops are formed increases with increasing He+ ion energy and irradiation temperature, although this thickness scarcely depends on He+ ion dose rate. The density of loops shows a linear increase against dose for irradiation with 20 and 30 keV He+ ions but has a higher order dependence with respect to doses greater than 2 under irradiation with 5 and 10 keV He+ ions. On the basis of the results induced by He+ ion irradiation, we have concluded that a low fraction of high energy PKAs play an important role for the nucleation of interstitial loops for energies higher than about 20 keV.

Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalJournal of Nuclear Materials
Volume233-237
Issue numberPART II
DOIs
Publication statusPublished - Jan 1 1996

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Helium
helium ions
Ion bombardment
ion irradiation
Copper
Nucleation
Irradiation
nucleation
Ions
copper
Defects
irradiation
defects
interstitials
ions
dosage
Dosimetry
wedges
energy
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Nucleation and growth process of defect clusters in copper during helium ion irradiation. / Yasuda, Kazuhiro.

In: Journal of Nuclear Materials, Vol. 233-237, No. PART II, 01.01.1996, p. 1051-1056.

Research output: Contribution to journalArticle

@article{200da774a9474653b991dcf43002a674,
title = "Nucleation and growth process of defect clusters in copper during helium ion irradiation",
abstract = "The formation process of interstitial dislocation loops in copper under He 1 ion irradiation has been studied by using transmission electron microscopy. Wedge shaped specimens of pure copper are subjected to irradiation with 5 to 100 keV He+ ions at irradiation temperatures between 300 to 570 K. The minimum thickness where interstitial loops are formed increases with increasing He+ ion energy and irradiation temperature, although this thickness scarcely depends on He+ ion dose rate. The density of loops shows a linear increase against dose for irradiation with 20 and 30 keV He+ ions but has a higher order dependence with respect to doses greater than 2 under irradiation with 5 and 10 keV He+ ions. On the basis of the results induced by He+ ion irradiation, we have concluded that a low fraction of high energy PKAs play an important role for the nucleation of interstitial loops for energies higher than about 20 keV.",
author = "Kazuhiro Yasuda",
year = "1996",
month = "1",
day = "1",
doi = "10.1016/S0022-3115(96)00109-2",
language = "English",
volume = "233-237",
pages = "1051--1056",
journal = "Journal of Nuclear Materials",
issn = "0022-3115",
publisher = "Elsevier",
number = "PART II",

}

TY - JOUR

T1 - Nucleation and growth process of defect clusters in copper during helium ion irradiation

AU - Yasuda, Kazuhiro

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The formation process of interstitial dislocation loops in copper under He 1 ion irradiation has been studied by using transmission electron microscopy. Wedge shaped specimens of pure copper are subjected to irradiation with 5 to 100 keV He+ ions at irradiation temperatures between 300 to 570 K. The minimum thickness where interstitial loops are formed increases with increasing He+ ion energy and irradiation temperature, although this thickness scarcely depends on He+ ion dose rate. The density of loops shows a linear increase against dose for irradiation with 20 and 30 keV He+ ions but has a higher order dependence with respect to doses greater than 2 under irradiation with 5 and 10 keV He+ ions. On the basis of the results induced by He+ ion irradiation, we have concluded that a low fraction of high energy PKAs play an important role for the nucleation of interstitial loops for energies higher than about 20 keV.

AB - The formation process of interstitial dislocation loops in copper under He 1 ion irradiation has been studied by using transmission electron microscopy. Wedge shaped specimens of pure copper are subjected to irradiation with 5 to 100 keV He+ ions at irradiation temperatures between 300 to 570 K. The minimum thickness where interstitial loops are formed increases with increasing He+ ion energy and irradiation temperature, although this thickness scarcely depends on He+ ion dose rate. The density of loops shows a linear increase against dose for irradiation with 20 and 30 keV He+ ions but has a higher order dependence with respect to doses greater than 2 under irradiation with 5 and 10 keV He+ ions. On the basis of the results induced by He+ ion irradiation, we have concluded that a low fraction of high energy PKAs play an important role for the nucleation of interstitial loops for energies higher than about 20 keV.

UR - http://www.scopus.com/inward/record.url?scp=0030260239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030260239&partnerID=8YFLogxK

U2 - 10.1016/S0022-3115(96)00109-2

DO - 10.1016/S0022-3115(96)00109-2

M3 - Article

AN - SCOPUS:0030260239

VL - 233-237

SP - 1051

EP - 1056

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - PART II

ER -