Nucleation and subsequent growth of clusters in reactive plasmas

Research output: Contribution to journalConference article

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Abstract

Nucleation and subsequent growth processes of clusters, i.e. particles below a few nm in size, have been studied in capacitively coupled high-frequency SiH4 discharges. Time evolution of size and density of clusters has clearly shown the existence of a bottleneck in the size distribution at around Si4Hx's. After the nucleation, the clusters of the large size group, SinHx's (n > 4), grow mainly due to influxes of those of the small size group, SinHx's (2 ≤ n ≤ 4) and other molecular species SiHx's (0 ≤ x ≤ 3). These results have led to the growth model of clusters, which can reasonably explain the results obtained until now. Furthermore, effects of gas flow, discharge modulation, gas temperature gradient and hydrogen dilution on growth and behaviour of clusters have been studied to control their growth. The reactor, which suppresses the growth of clusters both by thermophoretic force and by gas flow and evacuation without stagnation, has been newly developed to make a-Si:H films of high qualities. The qualities of films deposited using the reactor are much better than those of conventional high-quality films.

Original languageEnglish
JournalPlasma Sources Science and Technology
Volume11
Issue number3 A
DOIs
Publication statusPublished - Jan 1 2002
Event25th International Conference on Phenomena in Ionizied Gases - Nagoya, Japan
Duration: Jul 17 2001Jul 22 2001

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nucleation
gas flow
reactors
gas temperature
dilution
temperature gradients
modulation
hydrogen

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Nucleation and subsequent growth of clusters in reactive plasmas. / Watanabe, Yukio; Shiratani, Masaharu; Koga, Kazunori.

In: Plasma Sources Science and Technology, Vol. 11, No. 3 A, 01.01.2002.

Research output: Contribution to journalConference article

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N2 - Nucleation and subsequent growth processes of clusters, i.e. particles below a few nm in size, have been studied in capacitively coupled high-frequency SiH4 discharges. Time evolution of size and density of clusters has clearly shown the existence of a bottleneck in the size distribution at around Si4Hx's. After the nucleation, the clusters of the large size group, SinHx's (n > 4), grow mainly due to influxes of those of the small size group, SinHx's (2 ≤ n ≤ 4) and other molecular species SiHx's (0 ≤ x ≤ 3). These results have led to the growth model of clusters, which can reasonably explain the results obtained until now. Furthermore, effects of gas flow, discharge modulation, gas temperature gradient and hydrogen dilution on growth and behaviour of clusters have been studied to control their growth. The reactor, which suppresses the growth of clusters both by thermophoretic force and by gas flow and evacuation without stagnation, has been newly developed to make a-Si:H films of high qualities. The qualities of films deposited using the reactor are much better than those of conventional high-quality films.

AB - Nucleation and subsequent growth processes of clusters, i.e. particles below a few nm in size, have been studied in capacitively coupled high-frequency SiH4 discharges. Time evolution of size and density of clusters has clearly shown the existence of a bottleneck in the size distribution at around Si4Hx's. After the nucleation, the clusters of the large size group, SinHx's (n > 4), grow mainly due to influxes of those of the small size group, SinHx's (2 ≤ n ≤ 4) and other molecular species SiHx's (0 ≤ x ≤ 3). These results have led to the growth model of clusters, which can reasonably explain the results obtained until now. Furthermore, effects of gas flow, discharge modulation, gas temperature gradient and hydrogen dilution on growth and behaviour of clusters have been studied to control their growth. The reactor, which suppresses the growth of clusters both by thermophoretic force and by gas flow and evacuation without stagnation, has been newly developed to make a-Si:H films of high qualities. The qualities of films deposited using the reactor are much better than those of conventional high-quality films.

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