Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Yanping Xiao, Teruaki Motooka, Ryo Teranishi, Shinji Munetoh

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time Ti defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7Tm (Tm: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7Tm is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

    Original languageEnglish
    Pages (from-to)103-105
    Number of pages3
    JournalJournal of Crystal Growth
    Volume362
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2013

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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