Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation

Yanping Xiao, Teruaki Motooka, Ryo Teranishi, Shinji Munetoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The recrystallization processes of supercooled Si and Ge melts were investigated using molecular-dynamics (MD) simulations. The incubation time Ti defined as the cooling time period to obtain 10% recrystallization of supercooled melts is found to be minimum when temperature is around 0.7Tm (Tm: melting temperature for both of crystal Si and Ge). The MD results suggest that 0.7Tm is an optimum annealing temperature to enhance the nucleation rate in the growth processes of Si and Ge films.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalJournal of Crystal Growth
Volume362
Issue number1
DOIs
Publication statusPublished - Jan 1 2013

Fingerprint

Molecular dynamics
Nucleation
nucleation
molecular dynamics
Cooling
cooling
Computer simulation
Melting point
simulation
Annealing
Temperature
Crystals
temperature
melting
annealing
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation. / Xiao, Yanping; Motooka, Teruaki; Teranishi, Ryo; Munetoh, Shinji.

In: Journal of Crystal Growth, Vol. 362, No. 1, 01.01.2013, p. 103-105.

Research output: Contribution to journalArticle

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