Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study

Shinji Munetoh, Takanori Mitani, Takahide Kuranaga, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing the thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that the nucleation predominantly occurred in the u-Si region as judged by the coordination numbers and diffusion constants of atoms in the region, The results suggest that the nucleation occurs in the unmelted residual a-Si region during the laser irradiation and then the crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Original languageEnglish
Title of host publicationGroup IV Semiconductor Nanostructures-2006
Pages159-164
Number of pages6
Publication statusPublished - Jul 4 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume958
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Munetoh, S., Mitani, T., Kuranaga, T., & Motooka, T. (2007). Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study. In Group IV Semiconductor Nanostructures-2006 (pp. 159-164). (Materials Research Society Symposium Proceedings; Vol. 958).