Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass

A molecular-dynamics study

Shinji Munetoh, Takanori Mitani, Takahide Kuranaga, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing the thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that the nucleation predominantly occurred in the u-Si region as judged by the coordination numbers and diffusion constants of atoms in the region, The results suggest that the nucleation occurs in the unmelted residual a-Si region during the laser irradiation and then the crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Original languageEnglish
Title of host publicationGroup IV Semiconductor Nanostructures-2006
Pages159-164
Number of pages6
Volume958
Publication statusPublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

Fingerprint

laser annealing
Amorphous silicon
amorphous silicon
Molecular dynamics
Nucleation
nucleation
Annealing
molecular dynamics
Glass
Thin films
Lasers
glass
thin films
Melting
melting
Heating
Glass lasers
heating
glass lasers
Excimer lasers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Munetoh, S., Mitani, T., Kuranaga, T., & Motooka, T. (2007). Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study. In Group IV Semiconductor Nanostructures-2006 (Vol. 958, pp. 159-164)

Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass : A molecular-dynamics study. / Munetoh, Shinji; Mitani, Takanori; Kuranaga, Takahide; Motooka, Teruaki.

Group IV Semiconductor Nanostructures-2006. Vol. 958 2007. p. 159-164.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Munetoh, S, Mitani, T, Kuranaga, T & Motooka, T 2007, Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study. in Group IV Semiconductor Nanostructures-2006. vol. 958, pp. 159-164, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Munetoh S, Mitani T, Kuranaga T, Motooka T. Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass: A molecular-dynamics study. In Group IV Semiconductor Nanostructures-2006. Vol. 958. 2007. p. 159-164
Munetoh, Shinji ; Mitani, Takanori ; Kuranaga, Takahide ; Motooka, Teruaki. / Nucleation process during exclmer laser annealing of amorphous silicon thin films on glass : A molecular-dynamics study. Group IV Semiconductor Nanostructures-2006. Vol. 958 2007. pp. 159-164
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