Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells

S. Nakano, X. J. Chen, B. Gao, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

We investigated the influence of cooling rate on dislocation density in multicrystalline silicon using the unidirectional solidification process for solar cells. The results showed that the maximum value of dislocation density is decreased and that of residual stress is increased in a fast cooling process. These phenomena are attributed to the difference in dwell time at an elevated temperature for multiplication of dislocations.

Original languageEnglish
Pages (from-to)280-282
Number of pages3
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
Publication statusPublished - Mar 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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