Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Xue Feng Han; Xin Liu; Satoshi Nakano; Koichi Kakimoto

doi:10.1016/j.jcrysgro.2020.125752

Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Xue Feng Han, Xin Liu, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was carried out. The numerical model includes natural convection, thermocapillary convection, electromagnetic force, and rotation of the melt. The dopant concentration was obtained using steady-state calculation of dopant convection and diffusion. Through the comparison between the melt flow and normalized resistivity distribution, we investigated that, besides the well-known separation point, there was a secondary minimum resistivity near external triple point. This phenomenon was also indicated in previous experimental result, and thus was confirmed that the phenomenon was caused by strong electromagnetic force at external triple point.

Original language	English
Article number	125752
Journal	Journal of Crystal Growth
Volume	545
DOIs	https://doi.org/10.1016/j.jcrysgro.2020.125752
Publication status	Published - Sept 1 2020
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2020.125752

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@article{b35a16e96f16480a96d6ab52e27829a2,

title = "Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon",

abstract = "In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was carried out. The numerical model includes natural convection, thermocapillary convection, electromagnetic force, and rotation of the melt. The dopant concentration was obtained using steady-state calculation of dopant convection and diffusion. Through the comparison between the melt flow and normalized resistivity distribution, we investigated that, besides the well-known separation point, there was a secondary minimum resistivity near external triple point. This phenomenon was also indicated in previous experimental result, and thus was confirmed that the phenomenon was caused by strong electromagnetic force at external triple point.",

author = "Han, {Xue Feng} and Xin Liu and Satoshi Nakano and Koichi Kakimoto",

year = "2020",

month = sep,

day = "1",

doi = "10.1016/j.jcrysgro.2020.125752",

language = "English",

volume = "545",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

AU - Han, Xue Feng

AU - Liu, Xin

AU - Nakano, Satoshi

AU - Kakimoto, Koichi

PY - 2020/9/1

Y1 - 2020/9/1

N2 - In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was carried out. The numerical model includes natural convection, thermocapillary convection, electromagnetic force, and rotation of the melt. The dopant concentration was obtained using steady-state calculation of dopant convection and diffusion. Through the comparison between the melt flow and normalized resistivity distribution, we investigated that, besides the well-known separation point, there was a secondary minimum resistivity near external triple point. This phenomenon was also indicated in previous experimental result, and thus was confirmed that the phenomenon was caused by strong electromagnetic force at external triple point.

AB - In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was carried out. The numerical model includes natural convection, thermocapillary convection, electromagnetic force, and rotation of the melt. The dopant concentration was obtained using steady-state calculation of dopant convection and diffusion. Through the comparison between the melt flow and normalized resistivity distribution, we investigated that, besides the well-known separation point, there was a secondary minimum resistivity near external triple point. This phenomenon was also indicated in previous experimental result, and thus was confirmed that the phenomenon was caused by strong electromagnetic force at external triple point.

UR - http://www.scopus.com/inward/record.url?scp=85085733135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85085733135&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2020.125752

DO - 10.1016/j.jcrysgro.2020.125752

M3 - Article

AN - SCOPUS:85085733135

SN - 0022-0248

VL - 545

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 125752

ER -

Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Abstract

All Science Journal Classification (ASJC) codes

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