Abstract
By the development of micro-fabrication technology, much smaller-size electronic devices will be soon available. In such a smaller device, a non-equilibrium state might appear in metal and/or semiconductor. In this case, it is difficult to estimate the device performance by the macroscopic transport equations that assume quasi-equilibrium distribution. We are developing a numerical simulation based on Boltzmann transport equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this study, we show a new formulation of BTE for free electron in metal and its calculation result: the thermoelectric power obtained agreed with that of experimental value: the heat flux derived by the non-equilibrium distribution was two-orders small than that estimated by thermal conductivity.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
| Pages | 2099-2103 |
| Number of pages | 5 |
| Volume | PART C |
| Publication status | Published - 2006 |
| Event | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States Duration: Jul 17 2005 → Jul 22 2005 |
Other
| Other | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 7/17/05 → 7/22/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)