Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Shinichi Nishizawa, Michel Pons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Growth, etching, and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed using the improved heterogeneous model. The improved model was able to explain the growth and etching features accurately. In addition, we propose the surface flux, surface carbon and silicon concentration, and its ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages53-56
Number of pages4
Publication statusPublished - Dec 1 2005
Externally publishedYes
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

Fingerprint

numerical analysis
Numerical analysis
Chemical vapor deposition
reactors
vapor deposition
Doping (additives)
Silicon
Etching
Carbon
etching
carbon
silicon
Aluminum
Nitrogen
Fluxes
aluminum
nitrogen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S., & Pons, M. (2005). Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 53-56). (Materials Science Forum; Vol. 483-485).

Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. / Nishizawa, Shinichi; Pons, Michel.

Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. 2005. p. 53-56 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishizawa, S & Pons, M 2005, Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. in Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Materials Science Forum, vol. 483-485, pp. 53-56, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 8/31/04.
Nishizawa S, Pons M. Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. 2005. p. 53-56. (Materials Science Forum).
Nishizawa, Shinichi ; Pons, Michel. / Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor. Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. 2005. pp. 53-56 (Materials Science Forum).
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