Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells

Bing Gao, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impurities and dislocations in silicon crystals can cause significant deterioration in the conversion efficiency of solar cells. For increasing solar cell efficiency, reduction of impurities and dislocations is necessary. Numerical simulation is a powerful tool for improving the quality of silicon crystal for solar cells. A set of numerical analysis system that includes all processes involved in crystal growth has been developed for studying the carbon and oxygen transport in global furnace, and a three-dimensional Alexander-Haasen model was developed for studying the dislocation multiplication. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost.

Original languageEnglish
Title of host publicationDefects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering
EditorsYutaka Yoshida, Guido Langouche
PublisherSpringer Verlag
Pages241-272
Number of pages32
ISBN (Print)9784431557999
DOIs
Publication statusPublished - Jan 1 2015
Event7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014 - Hamamatsu, Japan
Duration: Oct 19 2014Oct 22 2014

Publication series

NameLecture Notes in Physics
Volume916
ISSN (Print)0075-8450

Other

Other7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014
CountryJapan
CityHamamatsu
Period10/19/1410/22/14

Fingerprint

numerical analysis
crystal growth
solar cells
impurities
silicon
multiplication
furnaces
carbon
oxygen
crucibles
deterioration
residual stress
crystals
simulation
cooling
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Gao, B., & Kakimoto, K. (2015). Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells. In Y. Yoshida, & G. Langouche (Eds.), Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering (pp. 241-272). (Lecture Notes in Physics; Vol. 916). Springer Verlag. https://doi.org/10.1007/978-4-431-55800-2_5

Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells. / Gao, Bing; Kakimoto, Koichi.

Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. ed. / Yutaka Yoshida; Guido Langouche. Springer Verlag, 2015. p. 241-272 (Lecture Notes in Physics; Vol. 916).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gao, B & Kakimoto, K 2015, Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells. in Y Yoshida & G Langouche (eds), Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. Lecture Notes in Physics, vol. 916, Springer Verlag, pp. 241-272, 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014, Hamamatsu, Japan, 10/19/14. https://doi.org/10.1007/978-4-431-55800-2_5
Gao B, Kakimoto K. Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells. In Yoshida Y, Langouche G, editors, Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. Springer Verlag. 2015. p. 241-272. (Lecture Notes in Physics). https://doi.org/10.1007/978-4-431-55800-2_5
Gao, Bing ; Kakimoto, Koichi. / Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells. Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering. editor / Yutaka Yoshida ; Guido Langouche. Springer Verlag, 2015. pp. 241-272 (Lecture Notes in Physics).
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