Numerical analysis of light elements transport in a unidirectional solidification furnace

Koichi Kakimoto, Bing Gao, Satoshi Nakano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Quantitative study of light elements such as carbon and oxygen in multi-crystalline silicon for solar cells is required to grow crystals with high quality. The transport of both carbon and oxygen is one of the critical issues to increase efficiency of solar cells made of silicon materials. Concentrations of carbon and oxygen in a furnace affect each others, therefore it is important to control mass transfer of carbon and oxygen in a furnace. Numerical calculation with a chemical reaction between carbon and oxygen was carried out to study how both light impurities are incorporated into crystals through the melt and gas during solidification process. The effects of flow rate and pressure on the impurities were examined. An increase in the flow rate can reduce both carbon and oxygen impurities in the crystal, though the reduction of carbon is more obvious. An increase in gas pressure can also obviously reduce the oxygen impurity but has only a small effect on the carbon impurity.

Original languageEnglish
Pages (from-to)659-661
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number3
DOIs
Publication statusPublished - Mar 1 2011

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light elements
solidification
numerical analysis
furnaces
carbon
oxygen
impurities
flow velocity
solar cells
crystals
silicon
mass transfer
gas pressure
chemical reactions
gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Numerical analysis of light elements transport in a unidirectional solidification furnace. / Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 3, 01.03.2011, p. 659-661.

Research output: Contribution to journalArticle

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