Numerical analysis of Mc-Si crystal growth

Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XIII
Subtitle of host publicationGADEST 2009
PublisherTrans Tech Publications Ltd
Pages193-198
Number of pages6
ISBN (Print)3908451744, 9783908451747
DOIs
Publication statusPublished - Jan 1 2009
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: Sep 26 2009Oct 2 2009

Publication series

NameSolid State Phenomena
Volume156-158
ISSN (Print)1012-0394

Other

Other13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
CountryGermany
CityBerlin
Period9/26/0910/2/09

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Kakimoto, K., Matsuo, H., Hisamatsu, S., Ganesh, B., Bing, G., Chen, X. J., Liu, L., Miyazawa, H., & Kangawa, Y. (2009). Numerical analysis of Mc-Si crystal growth. In Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009 (pp. 193-198). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.193