Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace

B. Gao, K. Kakimoto, S. Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1015-1020
Number of pages6
Edition1
DOIs
Publication statusPublished - Dec 1 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Gao, B., Kakimoto, K., & Nakano, S. (2010). Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1015-1020). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360744