Numerical analysis of the dislocation density in multicrystalline silicon for solar cells by the vertical bridgman process

Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Bing Gao, Yoshihiro Kangawa, Koichi Kakimoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-Sumino model. It was found that the multiplication of dislocations is higher in fast cooling processes. It was confirmed that residual stress is low at high temperatures because the movement of the dislocations relaxes the thermal strain, while the residual stress increases with decreasing temperature, because of reduced motion of dislocations and formation of a strain field at lower temperatures.

Original languageEnglish
Article number706923
JournalInternational Journal of Photoenergy
Volume2013
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Numerical analysis of the dislocation density in multicrystalline silicon for solar cells by the vertical bridgman process'. Together they form a unique fingerprint.

  • Cite this