Numerical analysis of the velocity of SiC growth by the top seeding method

F. Inui, B. Gao, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace.

Original languageEnglish
Pages (from-to)71-74
Number of pages4
JournalJournal of Crystal Growth
Volume348
Issue number1
DOIs
Publication statusPublished - Jun 1 2012

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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