Numerical analysis of the velocity of SiC growth by the top seeding method

F. Inui, B. Gao, S. Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si-C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si-C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace.

Original languageEnglish
Pages (from-to)71-74
Number of pages4
JournalJournal of Crystal Growth
Volume348
Issue number1
DOIs
Publication statusPublished - Jun 1 2012

Fingerprint

inoculation
numerical analysis
Numerical analysis
Phase diagrams
seeds
Crystals
phase diagrams
Crystallization
Crystal growth
Flow patterns
Furnaces
Temperature distribution
Carbon
Mass transfer
Fluxes
Heat transfer
mass transfer
crystals
furnaces
crystal growth

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Numerical analysis of the velocity of SiC growth by the top seeding method. / Inui, F.; Gao, B.; Nakano, S.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 348, No. 1, 01.06.2012, p. 71-74.

Research output: Contribution to journalArticle

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