Numerical analysis of thermoelectric voltage at a metallic point contact using the boltzmann equation

Kohei Ito, Kunio Hijikata, Takayoshi Inoue

Research output: Contribution to journalArticle

Abstract

The characteristic size of electronic de vices is rapidly approaching the electron and phonon mean free paths in semiconductor materials. In such devices, the nonequilibrium condition near the interface affects the thermal and charge transport considerably. A microscopic approach is thus required to model the transport in the device. In this study, the authors expand on a previous study of thermal and charge transport near a point contact interface by solving the Boltzmann equation numerically. The electron distribution function, electric field, and thermoelectric voltage are reported, and the nonequilibrium properties and transport near the point contact are discussed quantitatively.

Original languageEnglish
Pages (from-to)61-70
Number of pages10
JournalMicroscale Thermophysical Engineering
Volume1
Issue number1
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

Fingerprint

Boltzmann equation
Point contacts
numerical analysis
Charge transfer
Numerical analysis
nonequilibrium conditions
Electrons
Electric potential
electric potential
electron distribution
mean free path
Distribution functions
distribution functions
Electric fields
Semiconductor materials
electric fields
electronics
electrons
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Numerical analysis of thermoelectric voltage at a metallic point contact using the boltzmann equation. / Ito, Kohei; Hijikata, Kunio; Inoue, Takayoshi.

In: Microscale Thermophysical Engineering, Vol. 1, No. 1, 01.01.1997, p. 61-70.

Research output: Contribution to journalArticle

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