Numerical analysis of thermoelectric voltage at a metallic point contact using the boltzmann equation

The characteristic size of electronic de vices is rapidly approaching the electron and phonon mean free paths in semiconductor materials. In such devices, the nonequilibrium condition near the interface affects the thermal and charge transport considerably. A microscopic approach is thus required to model the transport in the device. In this study, the authors expand on a previous study of thermal and charge transport near a point contact interface by solving the Boltzmann equation numerically. The electron distribution function, electric field, and thermoelectric voltage are reported, and the nonequilibrium properties and transport near the point contact are discussed quantitatively.