Numerical approach to the investigation of performance of silicon nanowire solar cells embedded in a SiO2 matrix

Yasuyoshi Kurokawa, Shinya Kato, Yuya Watanabe, Akira Yamada, Makoto Konagai, Yoshimi Ohta, Yusuke Niwa, Masaki Hirota

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34 Citations (Scopus)

Abstract

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg = 1:9 eV)/n-type SiNWs embedded in a SiO2/n-type hydrogenated amorphous silicon oxide (Eg = 1:9 eV) structure have been investigated using two- and threedimensional device simulators, taking into account the quantum size effect. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 to 2.68 eV with decreasing diameter from 10 to 2 nm, owing to the quantum size effect. Note that under sunlight of AM1.5G, the open-circuit voltage (V oc) of SiNW solar cells also increased to 1.46 V with decreasing diameter of the SiNWs to 2 nm. This result suggests that it is possible to enhance Voc by applying the quantum size effect, and a SiNW is a promising material for all-silicon tandem solar cells.

Original languageEnglish
Article number11PE12
JournalJapanese journal of applied physics
Volume51
Issue number11 PART2
DOIs
Publication statusPublished - Nov 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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