Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP

Y. Kangawa, N. Kuwano, K. Oki, T. Ito

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

In an InGaAs/(110)InP, a CuAu-I type ordered structure during is formed growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (approximately 700 K).

Original languageEnglish
Pages (from-to)368-373
Number of pages6
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - Jun 2000
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: Oct 25 1999Oct 29 1999

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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