Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Xin Liu, Bing Gao, Koichi Kakimoto

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.

Original languageEnglish
Article number22364
Pages (from-to)58-64
Number of pages7
JournalJournal of Crystal Growth
Volume417
DOIs
Publication statusPublished - May 1 2015

Fingerprint

Silicon
Crystallization
Crystal growth
crystal growth
contamination
Melting
Contamination
Carbon
melting
carbon
silicon
flow velocity
Flow rate
gas flow
furnaces
Flow of gases
Furnaces
Gases
Impurities
impurities

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth. / Liu, Xin; Gao, Bing; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 417, 22364, 01.05.2015, p. 58-64.

Research output: Contribution to journalArticle

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abstract = "Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.",
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N2 - Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.

AB - Abstract Czochralski (CZ) growth of single silicon (Si) crystals is invariably accompanied by transport of impurities such as carbon (C), oxygen (O), and related compounds produced by reactions at high temperature. To study the generation and accumulation of C during the melting process, a transient global model was developed that included coupled O and C transport. Transport phenomena of C, O, and related compounds were predicted by considering five chemical reactions in the furnace. The dynamic behavior of impurities was revealed during the melting process of the Si feedstock. It was found that C contamination is activated once the melting front contacts argon gas. For accurate control of C contamination in CZ-Si crystals, the accumulation of C during the melting stage should be considered. Parameter studies of furnace pressure and gas flow rate were conducted on the accumulation of C during the melting stage. At the gas/melt interface, pressure and flow rate affected the C flux in different ways. The results suggest that increase in gas flow rate could reduce C contamination much more effectively than decrease in pressure.

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