Numerical investigation of crystal growth process of bulk Si and nitrides - A review

K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X. J. Chen, Y. Kangawa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three-dimensional analysis was carried out to investigate temperature distribution and solid-liquid interface shape of silicon for large-scale integrated circuits and photovoltaic silicon. The analysis enables prediction of the solid-liquid interface shape of silicon crystals. The result shows that the interface shape became bevel like structure in the case without crystal rotation. We also carried out analysis of nitrogen transfer in gallium melt during crystal growth of gallium nitride using liquid-phase epitaxy. The result shows that the growth rate at the center was smaller than that at the center.

Original languageEnglish
Pages (from-to)1185-1189
Number of pages5
JournalCrystal Research and Technology
Volume42
Issue number12
DOIs
Publication statusPublished - Dec 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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