Numerical investigation of crystal growth process of bulk Si and nitrides - A review

Koichi Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X. J. Chen, Yoshihiro Kangawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three-dimensional analysis was carried out to investigate temperature distribution and solid-liquid interface shape of silicon for large-scale integrated circuits and photovoltaic silicon. The analysis enables prediction of the solid-liquid interface shape of silicon crystals. The result shows that the interface shape became bevel like structure in the case without crystal rotation. We also carried out analysis of nitrogen transfer in gallium melt during crystal growth of gallium nitride using liquid-phase epitaxy. The result shows that the growth rate at the center was smaller than that at the center.

Original languageEnglish
Pages (from-to)1185-1189
Number of pages5
JournalCrystal Research and Technology
Volume42
Issue number12
DOIs
Publication statusPublished - Dec 1 2007

Fingerprint

Silicon
Crystallization
Crystal growth
Nitrides
nitrides
crystal growth
liquid-solid interfaces
silicon
Liquid phase epitaxy
Gallium nitride
Crystals
Gallium
gallium nitrides
dimensional analysis
liquid phase epitaxy
Liquids
mass transfer
crystals
numerical analysis
gallium

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Numerical investigation of crystal growth process of bulk Si and nitrides - A review. / Kakimoto, Koichi; Liu, L.; Miyazawa, H.; Nakano, S.; Kashiwagi, D.; Chen, X. J.; Kangawa, Yoshihiro.

In: Crystal Research and Technology, Vol. 42, No. 12, 01.12.2007, p. 1185-1189.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Liu, L. ; Miyazawa, H. ; Nakano, S. ; Kashiwagi, D. ; Chen, X. J. ; Kangawa, Yoshihiro. / Numerical investigation of crystal growth process of bulk Si and nitrides - A review. In: Crystal Research and Technology. 2007 ; Vol. 42, No. 12. pp. 1185-1189.
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