Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Frédéric Mercier, Shinichi Nishizawa

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Numerical study has been applied to analyze the high temperature solution growth process for bulk silicon carbide (SiC) crystal growth. A twodimensional axisymmetric model for 2-in. SiC crystal growth was used for this study. The purpose of this paper is to investigate the possible approaches to enhance the growth rate in this process. In particular, we studied the effect of an AC magnetic field on the carbon transport to the crystal growth interface. The results revealed that the carbon flux to the growing crystal is strongly affected by the coil position and the applied frequency. If these two process parameters are properly chosen, we show that the carbon flux at the growing front, and thus the growth rate of SiC, can be enhanced.

Original languageEnglish
Article number035603
JournalJapanese Journal of Applied Physics
Volume50
Issue number3
DOIs
Publication statusPublished - Mar 1 2011
Externally publishedYes

Fingerprint

Crystal growth
Silicon carbide
silicon carbides
crystal growth
Silicon
augmentation
carbon
silicon
Carbon
Fluxes
alternating current
coils
Magnetic fields
magnetic fields
crystals
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts. / Mercier, Frédéric; Nishizawa, Shinichi.

In: Japanese Journal of Applied Physics, Vol. 50, No. 3, 035603, 01.03.2011.

Research output: Contribution to journalArticle

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