Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Frédéric Mercier, Shin Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Numerical study has been applied to analyze the high temperature solution growth process for bulk silicon carbide (SiC) crystal growth. A twodimensional axisymmetric model for 2-in. SiC crystal growth was used for this study. The purpose of this paper is to investigate the possible approaches to enhance the growth rate in this process. In particular, we studied the effect of an AC magnetic field on the carbon transport to the crystal growth interface. The results revealed that the carbon flux to the growing crystal is strongly affected by the coil position and the applied frequency. If these two process parameters are properly chosen, we show that the carbon flux at the growing front, and thus the growth rate of SiC, can be enhanced.

Original languageEnglish
Article number035603
JournalJapanese journal of applied physics
Volume50
Issue number3
DOIs
Publication statusPublished - Mar 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts'. Together they form a unique fingerprint.

Cite this