Numerical modeling of SiC-CVD in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Michel Pons

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. In order to explain the effect of surface polarity, Si-face and C-face, the surface reaction model was improved. Then, the growth processes and doping features of both Si-face and C-face were analyzed. The role of conditions at growing surface, such as surface mass flux of both Si-containing and C-containing species, surface concentration of Si-containing and C-containing species and their ratio, is investigated. Then, the deposition and etching rates, and doping concentration are analyzed as the function of those parameters. In addition, surface morphology of growing epitaxial layer is also investigated in connection with growing surface condition.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalMicroelectronic Engineering
Volume83
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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