Abstract
On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.
| Original language | English |
|---|---|
| Pages (from-to) | 871-874 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Jan 15 2009 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy. / Nishizawa, Shinichi.
In: Journal of Crystal Growth, Vol. 311, No. 3, 15.01.2009, p. 871-874.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy
AU - Nishizawa, Shinichi
PY - 2009/1/15
Y1 - 2009/1/15
N2 - On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.
AB - On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.
UR - http://www.scopus.com/inward/record.url?scp=59749105555&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=59749105555&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.09.105
DO - 10.1016/j.jcrysgro.2008.09.105
M3 - Article
VL - 311
SP - 871
EP - 874
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -