Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy

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Abstract

On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.

Original languageEnglish
Pages (from-to)871-874
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - Jan 15 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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