Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

On the engineering point of view, it is important to develop a design technology of the furnace for SiC single crystal growth. In this point of view, the recent progress of modeling on both sublimation bulk growth and hot-wall epitaxy were presented. For the sublimation, the active control of grown crystal shape by modifying crucible geometry was demonstrated. The effect of nitrogen doping on the heat transfer in a growing crystal were also investigated. For the hot-wall epitaxy, growth rate, surface morphology, and doping concentration could be predicted qualitatively with taking account of the depositing surface conditions. Chlorine-containing system was supposed to provide more stable and uniform process than the common SiH4-based system.

Original languageEnglish
Pages (from-to)871-874
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number3
DOIs
Publication statusPublished - Jan 15 2009
Externally publishedYes

Fingerprint

Sublimation
Crystallization
sublimation
Epitaxial growth
Crystal growth
epitaxy
crystal growth
Doping (additives)
Single crystals
Chlorine
single crystals
Crucibles
active control
crucibles
crystals
Surface morphology
chlorine
furnaces
Furnaces
Nitrogen

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy. / Nishizawa, Shinichi.

In: Journal of Crystal Growth, Vol. 311, No. 3, 15.01.2009, p. 871-874.

Research output: Contribution to journalArticle

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