Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Shinichi Nishizawa, Michel Pons

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Numerical simulation was carried out on SiC-CVD in a horizontal hot-wall reactor. The growth and doping features of both Si- and C-terminated surfaces were analyzed by changing the inlet source gas conditions. The role of conditions at the growing surface on the growth feature was investigated. It was identified that the conditions at the growing surface are good parameters to explain the growth feature.

Original languageEnglish
Pages (from-to)334-336
Number of pages3
JournalJournal of Crystal Growth
Volume303
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - May 1 2007
Externally publishedYes

Fingerprint

Epitaxial growth
Silicon carbide
silicon carbides
epitaxy
reactors
Chemical vapor deposition
Gases
Doping (additives)
vapor deposition
Computer simulation
gases
silicon carbide
simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor. / Nishizawa, Shinichi; Pons, Michel.

In: Journal of Crystal Growth, Vol. 303, No. 1 SPEC. ISS., 01.05.2007, p. 334-336.

Research output: Contribution to journalArticle

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