Numerical simulation of a new SiC growth system by the dual-directional sublimation method

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Abstract

A new SiC growth system using the dual-directional sublimation method was investigated in this study. Induction heating and thermal conditions were computed and analyzed by using a global simulation model, and then the values of growth rate and shear stress in a growing crystal were calculated and compared with those in a conventional system. The results showed that the growth rate of SiC single crystals can be increased by twofold by using the dual-directional sublimation method with little increase in electrical power consumption and that thermal stresses can be reduced due to no constraint of the crucible lid and low temperature gradient in crystals.

Original languageEnglish
Pages (from-to)1697-1702
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number10
DOIs
Publication statusPublished - May 1 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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