Numerical simulation of heat and mass transfer in SiC sublimation growth

Shin Ichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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