Abstract
The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 43-46 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 389-393 |
| Issue number | 1 |
| Publication status | Published - Dec 1 2002 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Numerical simulation of heat and mass transfer in SiC sublimation growth. / Nishizawa, Shin Ichi; Kato, Tomohisa; Kitou, Yasuo; Oyanagi, Naoki; Arai, Kazuo.
In: Materials Science Forum, Vol. 389-393, No. 1, 01.12.2002, p. 43-46.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Numerical simulation of heat and mass transfer in SiC sublimation growth
AU - Nishizawa, Shin Ichi
AU - Kato, Tomohisa
AU - Kitou, Yasuo
AU - Oyanagi, Naoki
AU - Arai, Kazuo
PY - 2002/12/1
Y1 - 2002/12/1
N2 - The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.
AB - The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.
UR - http://www.scopus.com/inward/record.url?scp=2442433294&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442433294&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2442433294
VL - 389-393
SP - 43
EP - 46
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
IS - 1
ER -