Numerical simulation of heat and mass transfer in SiC sublimation growth

Shin Ichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalMaterials Science Forum
Volume389-393
Issue number1
Publication statusPublished - Dec 1 2002
Externally publishedYes

Fingerprint

Sublimation
sublimation
mass transfer
Mass transfer
heat transfer
Heat transfer
Computer simulation
simulation
Crystals
cavities
Temperature distribution
temperature distribution
tubes
crystals
Defects
defects
Polycrystals
polycrystals
Macros
Etching

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S. I., Kato, T., Kitou, Y., Oyanagi, N., & Arai, K. (2002). Numerical simulation of heat and mass transfer in SiC sublimation growth. Materials Science Forum, 389-393(1), 43-46.

Numerical simulation of heat and mass transfer in SiC sublimation growth. / Nishizawa, Shin Ichi; Kato, Tomohisa; Kitou, Yasuo; Oyanagi, Naoki; Arai, Kazuo.

In: Materials Science Forum, Vol. 389-393, No. 1, 01.12.2002, p. 43-46.

Research output: Contribution to journalArticle

Nishizawa, SI, Kato, T, Kitou, Y, Oyanagi, N & Arai, K 2002, 'Numerical simulation of heat and mass transfer in SiC sublimation growth', Materials Science Forum, vol. 389-393, no. 1, pp. 43-46.
Nishizawa, Shin Ichi ; Kato, Tomohisa ; Kitou, Yasuo ; Oyanagi, Naoki ; Arai, Kazuo. / Numerical simulation of heat and mass transfer in SiC sublimation growth. In: Materials Science Forum. 2002 ; Vol. 389-393, No. 1. pp. 43-46.
@article{4e96f9646b284489ae7eb8a99572d745,
title = "Numerical simulation of heat and mass transfer in SiC sublimation growth",
abstract = "The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.",
author = "Nishizawa, {Shin Ichi} and Tomohisa Kato and Yasuo Kitou and Naoki Oyanagi and Kazuo Arai",
year = "2002",
month = "12",
day = "1",
language = "English",
volume = "389-393",
pages = "43--46",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "1",

}

TY - JOUR

T1 - Numerical simulation of heat and mass transfer in SiC sublimation growth

AU - Nishizawa, Shin Ichi

AU - Kato, Tomohisa

AU - Kitou, Yasuo

AU - Oyanagi, Naoki

AU - Arai, Kazuo

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.

AB - The numerical simulation of SiC sublimation growth was carried out. On the results of flux control growth with innerguide tube, the tube controls the thermal field inside a growth cavity, and makes it possible to grow single crystal without obstacle polycrystal. It was also cleared that the grown crystal shape strongly depends on the temperature distribution inside a growth cavity. On the results of in-process etching, it was pointed out that defects occurrence can be suppressed by taking care of temperature distribution on the initial growing surface. These results show that by controlling the thermal field inside a growth cavity, it is possible to control the macro and micro crystal quality such as grown crystal shape and defects, respectively.

UR - http://www.scopus.com/inward/record.url?scp=2442433294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442433294&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2442433294

VL - 389-393

SP - 43

EP - 46

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - 1

ER -